Half-Bridge in a Package Infineon’s new automotive 40 V n-channel dual MOSFETs IAUCxxxH are already connected in half-bridge configuration...
The SiC reference design REF-DR3KIMBGSICMA is the combination of an inverter board and a gate driver board for the...
New EasyDUAL™ CoolSiC™ MOSFET modules in half-bridge configuration were updated with a new aluminum (AlN) ceramic. This advanced material...
Our Automotive FET-Parade ranks automotive power MOSFETs sorted by RDSon and manufacturer. Below tables list the devices with the...
Ohmic and thermal Resistance of MOSFETs In the past semiconductor manufacturers have spent a lot of effort to minimize...
The 1200 V CoolSiC™ MOSFETs (45mOhm) in TO247-3/-4 package build on a state-of-the-art trench semiconductor process optimized to combine...
Thanks to the high integration level of the STSPIN32F0A driver, the control board provides a powerful power stage, the...
Infineon is now starting the market introduction for 12 new products CoolSiC™ 1200 V discrete MOSFETs portfolio in TO247...
The EVAL-M5-E1B1245N-SiC is a complete evaluation board including a 3-phase CoolSiC™ MOSFET power module for motor drive applications. In...
With the innovation and best-in-class performance at the heart of Infineon, we are rendering the supply of outstanding products...
