The Package Impact
Ohmic and thermal Resistance of MOSFETs
In the past semiconductor manufacturers have spent a lot of effort to minimize the RDSon of MOSFET chips. However, the effective RDSon of a packaged device is the sum of chip-RDSon and ohmic package resistance. Because bond-wiring of the chips contributes significantly to the total resistance, manufacturers have recently introduced bond-wireless i. e. laminar contacting technologies e. g. with copper clips.
Low ohmic resistance is the prerequisite for low loss operation. But for a real device switching and conduction losses still generate heat in a MOSFET. This heat has to be dissipated to the ambient. One important mechanism to lead heat away from a MOSFET is heat conduction. For good heat conduction the thermal resistance Rthjc between heat source and package should also be as low as possible.
Vishay’s TrenchFET® GenIV MOSFETs feature excellent values for RDSon and thermal resistance:
|Type||Polarity||Voltage Class||Rdson mΩ||Rthjc K/W||Package||Datasheet
For comparison reasons the table includes a part in TO leadless package from another supplier.
Vishay’s TrenchFET® GenIV MOSFETs deliver previously unseen values of conductivity in packages smaller than TOLL.
Last update: 08.01.2021