Toshiba offers a wide range of 2nd Gen.650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current...
Silicon carbide is a compound of silicon and carbon. It is produced using a crystal growth process of sublimation...
Using a Junction Barrier Schottky/Merged PiN structure, ST offers 650 V automotive-grade SiC diodes with the best VF performance...
https://www.youtube.com/watch?v=WxtXqrqI_I0
SiC Schottky Barrier Diodes feature an ultra low and temperature independent reverse recovery charge Qrr. The wide band gap...
Rutronik diodes portfolio includes both high-voltage and small-signal devices. With increased environmental awareness, saving energy has become a major...
