Renesas Electronics Introduces New Advanced Low-Power SRAM Products
Renesas Electronics Corporation today introduced 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM. The new memory devices have a density of 4 megabits (Mb) and utilize a fine fabrication process technology with a circuit line width of 110 nanometers (nm).
The new SRAMs are the new series of Advanced LPSRAM and provide high reliability equivalent to that of Renesas’ existing SRAM products adopting a 150 nm process, including soft error free and latch-up free. They also achieve low-power operation with a standby current of maximum of 2 microamperes (µA) at 25°C, making them suitable for data storage in battery-backup devices.
Renesas’ low-power SRAMs have achieved widespread adoption in many different fields, including industrial, office, communication, automotive, and consumer products. Recently, as manufacturers systems have attained higher performance and more advanced functionality, SRAM has become an important factor in improving overall system reliability.
In particular, SRAM used to store important information such as system programs and billing data must provide a high level of reliability, and particular attention has come to be focused on measures to reduce soft error caused by alpha radiation and cosmic neutron radiation.
Advanced LP SRAMs can contribute to even better performance and reliability in applications where a high level of reliability is essential, such as factory automation equipment, measuring devices, equipment employed in smart grids, and transportation systems.
Furthermore, Advanced LP SRAM combines SRAM polysilicon TFT stacking technology and stacked capacitor technology to reduce the cell size. For example, the cell size of 110 nm Advanced LP SRAM is comparable to that of full CMOS SRAM fabricated using a 65 nm process.
Renesas intends to strengthen its lineup of 110 nm SRAMs by adding 8 Mb, 16Mb, 32Mb and 64 Mb 110 nm products.
Sample of Renesas Electronics’ new SRAMs will be available in November 2013. Mass production is scheduled to begin in December 2013. (Availability is subject to change without notice.)
Refer to the below link for the main specifications of the new SRAM devices.