Based upon the U-MOSX-H process, the new devices will significantly enhance power supply efficiency. Toshiba Electronics Europe (“Toshiba”) has...
The 1200 V CoolSiC™ MOSFETs (45mOhm) in TO247-3/-4 package build on a state-of-the-art trench semiconductor process optimized to combine...
Infineon is now starting the market introduction for 12 new products CoolSiC™ 1200 V discrete MOSFETs portfolio in TO247...
PrestoMOSTM JN series 600V PrestoMOS JN series contributes to reduce mounting area and improve inverter efficiency with Low RON...
MDmesh™ M6 power MOSFET series Combining low gate charge (Qg) and optimized capacitance profile, the MDmesh™ M6 power MOSFET...
The F3L11MR12W2M1_B65 is the new 11 mΩ 3-level module with CoolSiC™ MOS-FET, NTC and PressFIT Contact Technology. It extends...
Infineon‘s OptiMOS™ best-in-class (BiC) power MOSFETs in SuperSO8 package offer the lowest on-state resistance (RDS(on) ) enabling reduced losses...
