STMicroelectronics – STripFET F7 from 30V to 350V
ST’s STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications. In addition to the above, STripFET F7 will make the design immune to the EMI/EMC issues due to the well optimized Ciss/Crss ratio and due to the smooth recovery of the intrinsic diode.
The STripFET™ F7 Product portfolio is available also for the automotive market in a wide range of package options including DPAK, H2PAK-2, H2PAK-6, single/double island and DSC PowerFLATTM 5×6 with wettable flanks, TO-220 and die form. New packages ( TO-LL and LFPAK) are under development.
ST’s STripFET™ N-channel Power MOSFETs with breakdown voltages in the range from 33 to 350 V offer low gate charge and low on-resistance down to 1.1 mΩ (40 V) in a PowerFLAT 5×6 package. They are designed to meet a broad range of requirements for synchronous rectification, UPS, motor control, SMPS, power-over-Ethernet (PoE), inverter and automotive applications.
Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.