Rohm – Silicon Carbide Power Module 1200 V – 120A / 180A
ROHM has developed low –surge-noise power modules integrated SiC devices produced in-house, maximizing high-speed performance. The result is significantly reduced switching loss compared with conventional SiC IGBTs.
Key Features: (BSM120D12P2C005)
- Switching loss reduced by 85% (max.)*
- 50% less volume*
- High-speed switching
- Very thin package -1200V rated voltage/120A rated current
* Compared with conventional Si IGBT modules
Applications:
- EVs and HVs (Reduce cooling system size, decrease weight, and increase fuel economy)
- Railway Reduce Inverter size and weight
- Photovoltaics Increase power conditioner efficiency
- Power transmission Reduce power loss
- Industrial equipment Reduces power loss and size
- Servers Reduce data center power consumption by minimizing server power loss
