Rohm – Silicon Carbide Power Module 1200 V – 120A / 180A

ROHM has developed low –surge-noise power modules integrated  SiC devices produced in-house, maximizing high-speed performance. The result is significantly reduced switching loss compared with conventional SiC IGBTs.

Key Features: (BSM120D12P2C005)

  • Switching loss reduced by 85% (max.)*
  • 50% less volume*
  • High-speed switching
  • Very thin package -1200V rated voltage/120A rated current

* Compared with conventional Si IGBT modules


  • EVs and HVs (Reduce cooling system size, decrease weight, and increase fuel economy)
  • Railway Reduce Inverter size and weight
  • Photovoltaics Increase power conditioner efficiency
  • Power transmission Reduce power loss
  • Industrial equipment Reduces power loss and size
  • Servers Reduce data center power consumption by minimizing server power loss

EMIF03-SIM06F3 3-line EMI filter and ESD protection 

See also

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