Infineon Automotive MOSFETs for 48V Applications
OptiMOS™-T2 Power-Transistors
Infineon’s innovative Power MOSFETs serve the market needs throughout the whole energy conversion chain. OptiMOS™ is the market leader in highly efficient solutions. With a Drain-Source voltage limit of 100 V below specimen are suitable for 48 V automotive applications.
IPD90N10S4L-06 and IPB180N10S4-02
| Type | VDS | RDS(on) | ID |
| IPD90N10S4L-06 | 100 V | 6.6 mΩ | 90 A |
| IPB180N10S4-02 | 100 V | 2.5 mΩ | 180 A |
Features
- AEC-Q qualified
- N-Channel enhancement mode
- 175°C operating temperature
- Green product (RoHS compliant)
- 100% Avalanche tested
- Package PG-TO263-7-3
Benefits
- high current capability
- low switching and conduction power losses for high thermal efficiency
- robust packages with superior quality and reliability
- optimized total gate charge enables smaller driver output stages
Applications
- Drive Train, Microhybrid
- 48V inverter
- 48V DC/DC converter
- HID lighting
- Direct injection
For more information please contact marius.korn@rutronik.com.
