Infineon - CIPOS™ Maxi SiC IPM - IM828-XCC

Infineon – CIPOS™ Maxi SiC IPM – IM828-XCC

High-performance CIPOS™ Maxi transfer molded silicon carbide IPM IM828-XCC integrates 6 CoolSiC™ MOSFETs with an optimized 1200 V 6-channel SOI gate driver to increase reliability, provide excellent protection and optimize PCB size and system costs.
The smallest and most compact package in the 1200 V class, this IPM combines a power rating in excess of 8 kW with exceptional power density, reliability and performance. It offers excellent protections such as under-voltage lockout on all channels, all switches turnoff during protection, cross-conduction prevention, over-current protection, temperature monitoring.

Features
– Fully isolated dual inline molded module with DCB
– 1200 V CoolSiC™ MOSFET
– Rugged 1200 V SOI gate driver technology
– Integrated bootstrap functionality
– Overcurrent shutdown
– Undervoltage lockout on all channels
– Turnoff of all six switches during protection
– Cross-conduction prevention
– Allowable negative VS potential up to -11 V for signal transmission at
– VBS=15 V
– Low-side emitter pins accessible

Benefits
– Smallest package size in 1200 V IPM class with high power density and excellent performance
– Gate driver technology with enhanced robustness for excellent protection
– High efficiency up to 99%
– Wide switching speed range up to 80 kHz
– Adapted to fast-switching applications with lower power losses
– Simplified design and manufacturing

Competitive advantage
Infineon is the only company that has released transfer molded SiC MOSFET IPM as of 2020.

Target applications
– 3-phase PFC
– Pumps
– Active filter (active power factor correction) for HVAC
– Low-power general purpose drives (GPI, servo drives)

Block diagram