STMicroelectronics – Latest MDmesh M6 and DM6 series
MDmesh™ M6 power MOSFET series
Combining low gate charge (Qg) and optimized capacitance profile, the MDmesh™ M6 power MOSFET series is today’s reference for resonant topologies. This new super-junction MDmesh™ M6 series opens the door to power converter designers for new scenarios targeting high efficiency and power density.
With a breakdown voltage ranging from 600 to 700V, MDmesh™ M6 power MOSFETs are available in a wide range of package options including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. Power MOSFETs are belonging to the STPOWER™ family.
Key features and benefits:
- Optimized threshold voltage for soft switching
- Good switching behavior for hard and soft switching
- Low gate charge for operation at high frequencies
- Capacitance profiles and threshold voltage optimized to target high efficiency on new topologies in power conversion applications
- Extremely high efficiency performance to increase power density
- Wide product portfolio
MDmesh™ DM6 power MOSFET series
The MDmesh™ DM6 super-junction MOSFETs are ST’s latest fast recovery diode series optimized for full-bridge phase-shifted ZVS topologies.
These 600 – 650V fast recovery MOSFETs feature a very low recovery charge and time (Qrr, trr) and deliver up to 15% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (50V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines. Power MOSFETs are belonging to the STPOWER™ family.
Key features and benefits:
- Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
- Higher dV/dt capability for improved system reliability
- AEC-Q101-qualified 600V and 650V fast recovery MOSFETs
