100V OptiMOS™: Highest Power Density and System Efficiency

Infineon’s 100V OptiMOS™ Low Voltage Power MOSFET offers world’s lowest RDS(on) of e.g. 2mΩ in TO-Leadless and TO-220 package. With 30% lower Figure-of-Merit (Qg x RDS(on)) and outstanding switching performance this MOSFET family provides highest power density and system efficiency, especially in Light Electric Vehicle Applications where an increased battery range, lifetime and reduced charge time are required.

Due to Infineon’s reliable and high quality products an increased lifetime, stable applications and lower maintenance costs can be achieved.

The OptiMOS™ technology enables highest efficiency on smallest area, leading to miniaturized system solutions. Infineon’s well established Super Junction MOSFET technology, in-depth system support and available evaluation boards for fast testing and prototyping enable a reduction of development time and cost.

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