Vishay - SiZ240DT Integrated 40V MOSFET Half-Bridge Power Stage in PowerPAIR®Package

Vishay – SiZ240DT Integrated 40V MOSFET Half-Bridge Power Stage in PowerPAIR®Package

New Space-Saving SiZ240DT Integrated 40V MOSFET Half-Bridge Power Stage Offers Best in Class RDS(ON) and FOM in Compact PowerPAIR® 3x3S Package to Increase Power Density and Efficiency.

Vishay Intertechnology introduces a new 40V n-channel MOSFET half bridge power stage that delivers increased power density and efficiency for white goods and industrial, medical, and telecom applications. Integrating high side and low side MOFETs in one compact PowerPAIR 3.3mm by 3.3mm package, the Vishay Siliconix SiZ240DT provides best in class on-resistance and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications.

_{The two MOSFET devices are internally connected in a half bridge configuration in the PowerPAIR 3.3mm by 3.3mm package}

Product Benefits:

High side and low side TrenchFET® MOSFETs integrated in one compact PowerPAIR® 3.3 mm by 3.3 mm
package
- Internally connected in a half-bridge configuration
- Saves space over using discrete solutions, reducing component counts and
  simplifying designs
On-resistance down to 8.05 mΩ at 10 V for the Channel 1 MOSFET and 8.41 mΩ at 10 V for the Channel 2 MOSFET
Low gate charge of 6.9 nC (Channel 1) and 6.5 nC (Channel 2)
Wire-free internal construction minimizes parasitic inductance
- Enables high frequency switching and thus reduces the size of magnetics and final designs
Optimized Qgd / Qgs ratio reduces noise to further enhance the device’s switching characteristics
100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free

Features:

The Channel 1 MOSFET, with a RDS-Qg FOM of 65 mΩ-nC, is typically used as the control switch in a synchronous buck converter, while the Channel 2 MOSFET, with RDS-Qg FOM of 65.5mΩ-nC, is typically a synchronous switch
On-resistance times gate charge FOM is 14 % lower than the next best device, enabling higher efficiency for fast switching applications
On-resistance values are up to 16 % lower than the closest competing products
65 % smaller than dual devices in 6 mm by 5 mm packages, the dual MOSFET is one of the most compact integrated products on the market
- Conventional solutions using two discrete devices take up a total package footprint area of 63.34 mm² per MOSFET halfbridge
- The SiZ240DT offers a MOSFET half bridge in a footprint area of 10.89 mm²

_{Comparing two 40 V discrete devices in the PowerPAK™ SO-8 and the SiZ240DT}

Market Applications:

Motor control in vacuum cleaners, drones, power tools, motorized furniture, factory automation, and nonimplantable medical devices
Half-bridge power stages for synchronous buck, DC/DC conversions, wireless chargers, and switch-mode power supplies in telecom equipment and servers