STMicroelectronics – MDmesh DM2 series – New 600 and 650 V MOSFETs with integrated fast-recovery body diode
ST has extended its offering of MDmesh DM2 MOSFETs for industrial applications with the introduction of new high-efficiency 600 and 650 V MOSFETs featuring ultra-low Qg for increased light load efficiency, extremely low Coss/Ciss, very low on-state resistance and high dv/dt ruggedness. Ideal for full-bridge and half-bridge topologies, these new devices also feature a very low recovery charge (Qrr) and recovery time (trr).
Key features and benefits:
- Improved intrinsic diode reverse recovery time (Trr) for increase efficiency
- Higher dV/dt capability for improved system reliability
- AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V MOSFETs
