Microchip expands family of Serial Quad I/O™ SuperFlash® Memory devices with 1.8V low-power 4-Mbit and 8-Mbit memory

Key Facts:

  • New SuperFlash Memory devices offer low-operating voltage range from 1.65 to 1.95V
  • Provides the fastest erase times of any competing device for reduced test & update times
  • High-speed 104 MHz quad I/O serial interface allows high data throughput
  • Stores & executes programmes from Flash to eliminate code shadowing on a RAM
  • Combines low power consumption with a low pin-count package for portable applications

Microchip announces an expansion of its 1.8V Serial Quad I/O (SQI) SuperFlash® Memory with the SST26WF080B and SST26WF040B devices. These devices offer 4-Mbit and 8-Mbit of memory and are manufactured with Microchip’s high-performance SuperFlash technology, which provides the industry’s fastest erase times and superior reliability.

The SST26WF080B/040B provide the fastest erase times of any competing device due to the use of SuperFlash technology. Sector and block erase commands are completed in just 18 ms and a full chip erase operation is completed in 35 ms. Competing devices require in the range of 5 to 15 seconds to complete a full chip erase operation, making SST26WF080B/040B approximately 300 times faster. The fast erase times can provide a significant cost savings to customers by minimising the time required for testing and firmware updates, therefore increasing their manufacturing throughput.

The SQI interface is a high-speed 104 MHz quad I/O serial interface which allows for high data throughput in a low pin-count package. This interface enables a low latency execute-in-place (XIP) capability, allowing programmes to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device. The SST26WF080B/040B provides faster data throughput than a comparable x16 parallel Flash device without the associated high cost and

high-pin count of parallel Flash. The SQI interface also offers full command-set backwards compatibility to the traditional Serial Peripheral Interface (SPI) protocol.

Designed for low-power consumption, the SST26WF080B/040B helps to maximise battery life in portable powered applications. Standby current consumption is 10 µA typical and a deep power-down mode further reduces current consumption to 1.8 µA typical. Active read current at 104 MHz is 15 mA typical. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF080B/040B an excellent choice for applications such as mobile handsets, Bluetooth® headsets, GPS, camera modules, hearing aids and any battery-powered devices.

The SST26WF080B/040B offers excellent quality and reliability with 100 years data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection and a One-Time Programmable (OTP)

2 Kbyte Secure ID area. These features protect against unauthorised access and malicious read, programme and erase intentions. The device also includes a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table, which contains identifying information about the function and capability of the SST26WF080B/040B in order to simplify software design.

The SST26WF080B/040B devices are available today for sampling and volume production in 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-contact USON (2mm x 3mm) and 8-ball XFBGA (Z-Scale) packages.

For additional information, visit Microchip’s Web site at:

http://www.microchip.com/SST26WF080B-040B-Page-011915a

See also

© 2017 Rutronik GmbH, Germany

Log in with your credentials

or    

Forgot your details?

Create Account