Based upon the U-MOSX-H process, the new devices will significantly enhance power supply efficiency. Toshiba Electronics Europe (“Toshiba”) has...
New SiHH070N60EF Fourth-Generation 600 V EF Series Fast Body Diode MOSFET Provides Industry-Low RDS(ON)*QgFOM of 3.1Ω*nC, Lowers Conduction and...
ROHM today announced the availability of six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR series, ideal...
SiR680ADP Offers Best in Class RDS(ON) Times Gate Charge FOM to Increase Efficiency; Combines RDS(ON) Down to 2.35 mOhm...
The 1200 V CoolSiC™ MOSFETs (45mOhm) in TO247-3/-4 package build on a state-of-the-art trench semiconductor process optimized to combine...
The Automotive CoolSiC™ MOSFETs has been developed for cur-rent and future On-Board Charger and DC-DC applications in hy-brid and...
With the innovation and best-in-class performance at the heart of Infineon, we are rendering the supply of outstanding products...
Infineon’s latest 100-150 V StrongIRFET™ MOSFET devices are optimized for both high current and low RDS(on) making them the...
OptiMOS™ P-channel MOSFETs 60V represents the new technology targeted for battery management, load switch and reverse polarity protection applications...
New SiSS12DN 40V MOSFET increases Efficiency and Power Density with RDS(ON) of 1.98 mΩ, Low Gate Charge of 28.7...
