Alliance Memory – High-Speed CMOS DDR1 SDRAMs

Alliance Memory introduces the AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb, respectively, in the 66-pin TSOP II package.

Ideal for a range of products requiring high memory bandwidth, and particularly suited to high-performance PC applications, Alliance Memory’s DDR1 SDRAMs provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions.

Key Specifications and Benefits:

  • Internally configured as four banks of 1M (AS4C4M16D1), 2M (AS4C8M16D1), 4M (AS4C16M16D1), or 8M (AS4C32M16D1) word x 16 bits with a synchronous interface
  • Programmable read or write burst lengths of 2, 4, or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Fast clock rates of 200 MHz
  • 400 Mbps/pin data rate
  • Operate from a single +2.5-V (± 0.2 V) power supply
  • Commercial temperature range of 0 °C to 70 °C
  • Lead (Pb) and halogen free

Key Applications:

  • Medical, communications, industrial, and consumer products
  • PC applications

Samples of the new DDR1 SDRAMs are available now!

 

See also

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