STMicroelectronics – 400/650V MDmesh™ DM2
ST’s new MOSFET series with integrated fast-recovery body diode
New super-junction technology with fast intrinsic diode ideal for telecom, automotive and solar high-power systems.The MDmesh™ DM2 is a new MOSFET silicon-based technology with a fast-recovery intrinsic diode. This new 400/650 V series achieves up to 40% better RDS(on) than earlier versions thanks to ST’s super-junction technology, combined with an excellent performance in terms of trr/Qrr and the industry’s best soft switching performance. Furthermore, the new MDmesh DM2 family is among the best in terms of turn-off energy (Eoff) at high currents and also shows a low gate charge, input capacitance and a fast recovery phase of the intrinsic diode.
KEY FEATURES
- Higher BVDSS: from 400 up to 650 V
- Fast-recovery body diode
- Ultra-low gate charge (QG)
- Very low RDS(on)
- Automotive AEC-Q101 qualified
KEY BENEFITS
- Increased safety range & flexibility
- Excellent dynamic behavior
- Improved high load efficiency
- Lower conduction losses
APPLICATIONS
- Telecom/Server
- Automotive
- Solar
- Motor Control
MDmesh™ DM2 VS COMPETITION
The graphs show the good turn-off energy behavior especially at high currents and better efficiency vs Competition. The MDmesh™ DM2 series performs better than the direct competition and is the best-in-class among the previous ST’s fast diode technologies.
