STMicroelektronics – Trench gate field-stop IGBT – 1200V M series
New M series IGBTs increase energy efficiency and ruggedness for solar and industrial power applications
Based on the third generation at 1200 V for IGBTs in ST’s proprietary trench gate field-stop technology, the M series increases the efficiency of UPS, solar, welding and industrial drive applications. Working up to 20 kHz in hard-switching topologies thanks to the optimal trade-off between on state conduction and switching performance, these devices also offers outstanding robustness and EMI characteristics.
- 10 us minimum short circuit capability at starting TJ of 150°C
- 175 °C maximum operating junction temperature (TJ )
- The lowest overall losses up to 20 kHz
- M series is tailored to improve efficiency of targeted applications
- Longer lifetime
- Safe paralleling
- Soft and fast recovery antiparallel diode
- High robustness
- Motor Control
- Industrial drives
- Solar inverters
1200V M SERIES IGBTs
STGW40M120DF3 OUTPUT CHARACTERISTICS AND SWITCHING OFF
The typical output characteristics and switching-off are showed below.
On the left, the typical output characteristics for the STGWA40M120DF3 at both 25°C and 175°C. As shown below a positive derating of VCE(sat) is resulting: from 1.85V at 25°C to 2.3V at 175°C.
On the right, the typical switching-off is showed. Despite the extremely high temperature of 175°C, the switching-off loss are limited and no important tail current is resulting. This to show the best compromise between conduction and switching ideal for any industrial drive applications working up to 20 kHz in hard-switching circuitries.