ROHM SiC Power Mosfet Modules
ROHM Semiconductor’s Full-SiC half bridge power modules are integrating SiC MOSFETs and SBDs in industrial standard packages. An original electric field mitigation structure, along with a novel screening method, is utilized to maintain reliability and enable the development of the first mass production process for Full-SiC power modules.
Switching loss of Full-SiC power module integrating SiC MOSFETs and SBDs is significantly lower than conventional IGBT modules. These new modules make high frequency operation above 100kHz possible (unlike conventional products).
ROHM SiC Power Mosfet Modules have been already used in various applications because of their superior characteristics over conventional silicon devices.
Key Features:
- Low stray inductance
- High speed recovery characteristics
- Low switching losses
- No de-rating necessary compared to IGBT
Applications:
- Renewable Energy/ Energy Storage
- EV/HEV Inverter and Chargers
- Induction Heating/ Welding
- HVDC
