Vishay - New 40V Mosfet in PowerPAK 1212-8S

Vishay – New 40V Mosfet in PowerPAK 1212-8S

New SiSS12DN 40V MOSFET increases Efficiency and Power Density with R_DS(ON)of 1.98 mΩ, Low Gate Charge of 28.7 nC, and Best in Class C_OSS of 680 pF in 3.3 mm x 3.3 mm PowerPAK^®1212-8S Package

Product Benefits:

Maximum on-resistance down to 1.98 mΩ at 10 V minimizes conduction losses
Low C_OSS of 680 pF and gate charge of 28.7 nC reduce power losses from switching
Offered in compact 3.3 mm by 3.3 mm PowerPAK 1212-8S package
100 % R_G– and UIS-tested, RoHS-compliant, and halogen-free

Market Applications:

Synchronous rectification in AC/DC power supplies
Primary- and secondary-side switching in DC/DC converters targeting telecom, server, and medical equipment
Half-bridge power stage and buck-boost converters in voltage regulation for server and telecom equipment
OR-ing functionality in telecom and server power supplies
Power stage for switch capacitor or switch tank converters
Motor drive control in power tools and industrial equipment; and
Battery protection and charging in battery management modules

The News:

Vishay Intertechnology introduces a new 40 V TrenchFET^® Gen IV n-channel power MOSFET designed to increase efficiency and power density in power conversion topologies. The Vishay Siliconix SiSS12DN delivers the lowest C_OSS in the sub-2-mΩ class and low gate charge of 28.7 nC.

Best in class C_OSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero-voltage-switching (ZVS) or switch-tank topology
Utilizes 65 % less PCB space than similar solutions in 6 mm by 5 mm packages, enabling higher power density
Minimizes conduction and switching losses simultaneously to increase efficiency for several building blocks in power supplies