Toshiba – Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
TPD7104AF – Intelligent power device 60V (High side power-MOSFET driver with built-in charge pump)
Description
- Introduction of solid state replay application with TPD7104AF and power MOSFET
- Description of the load short circuit(over current) detection function and the power supply reverse connection protction function
- Design example of 40A capable solid state relay application
- Operation confirmation by spice simulation
Features
- Solid state relay application with two pairs of TPD7104AF and TKR74F04PB
- Input voltage : 12V
- Maximum load current : 40A
- Load short circuit(over current) detection function
- Power supply reverse connection protection function
Short circuit detection circiut block diagram
Power supply reverse protection circuit block diagram
Reference design files
Design, File
| Part Number | Device Category | Portion Usage | Description |
|---|---|---|---|
| TPD7104AF | Low voltage IPD | 2 | Power MOSFET Gate driver/High-side switch/VDD=5 to 18V/Built-in charge pump circuit /PS-8 |
| TKR74F04PB* | MOSFET | 2 | U-MOSIX-H/40V/0.74mΩ(max)@VGS=10V/High-speed switching/TO-220SM(W) |
* : New product
Application Note
| Name | Outline | Date of issue |
|---|---|---|
| Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes (PDF:1,061KB) | Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment | 2/2017 |
| Impacts of the dv/dt Rate on MOSFET(PDF:1,110KB) | The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. | 12/2017 |
| MOSFET Avalanche Ruggedness(PDF:872KB) | Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it | 12/2017 |
| MOSFET Self-Turn-On Phenomenon (PDF:1,720KB) | When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. | 12/2017 |
| Parasitic Oscillation and Ringing | Describes the oscillation mechanism of MOSFETs for switching applications | 8/2017 |
| Parasitic Oscillation (Power MOSFET Paralleling) | Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation | 8/2017 |
| MOSFET Gate Driver Circuit | Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits | 8/2017 |
| Structures and Characteristics: Power MOSFET Application Notes(PDF:484KB) | Describes planar, trench and super-junction power MOSFETs | 11/2016 |
| Maximum Ratings: Power MOSFET Application Notes(PDF:1,075KB) | Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs | 11/2016 |
| Selecting MOSFFETs and Consideration for Circuit Design: Power MOSFET Application Notes (PDF:1,427KB) | Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on | 11/2016 |
Catalog
| Name | Outline | Date of issue |
|---|---|---|
| Selection Guide MOSFETs(PDF:1970KB) | Describes the lineups of Power MOSFETs and Small-signal MOSFETs by polarity and packages. | 12/2017 |
| MOSFETs (Bilingual)(PDF:2527KB) | Describes the lineups of power and small-signal MOSFETs. | 3/2016 |
| Part Number List: MOSFETs(PDF:1295KB) | The lineup table of power and small-signal MOSFETs by package. | 3/2016 |
