Toshiba – SiC Schottky Barrier Diodes

Toshiba offers a wide range of 2nd Gen.650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A, in through-hole (TO-220) packages.
The 2nd Gen.SiC SBD series provides a 30% lower figure of merit (VF*QC)*1 and a higher surge peak forward current (IFSM) than the 1st Gen.SiC SBD series and therefore helps improve the efficiency and reduce the size of power supplies.

Introduction:

  • High surge peak forward current (IFSM):  Approx. 7 to 9 times the current rating, IF(DC)
  • Low figure of merit (VF*QC)*1:  Provides approx. 30% lower figure of merit than that of the Gen-1 SiC SBD series and therefore provides higher efficiency
  • Wide range of packaging options including insulated and surface-mount packages:  Addresses diverse design requirements

Sic Shottky

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