Toshiba – SiC Schottky Barrier Diodes
Toshiba offers a wide range of 2nd Gen.650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A, in through-hole (TO-220) packages.
The 2nd Gen.SiC SBD series provides a 30% lower figure of merit (VF*QC)*1 and a higher surge peak forward current (IFSM) than the 1st Gen.SiC SBD series and therefore helps improve the efficiency and reduce the size of power supplies.
Introduction:
- High surge peak forward current (IFSM): Approx. 7 to 9 times the current rating, IF(DC)
- Low figure of merit (VF*QC)*1: Provides approx. 30% lower figure of merit than that of the Gen-1 SiC SBD series and therefore provides higher efficiency
- Wide range of packaging options including insulated and surface-mount packages: Addresses diverse design requirements
