STM – Best trade-off between conduction and switch-off losses with our 650 V 15 A IGBT (STGB15M65DF2)
Trench gate field-stop IGBT M series, 650 V 15 A low loss
New STGB15M65DF2 with proprietary trench gate field-stop structure works at switching frequencies up to 20 kHz in hard-switching circuit topologies such as pumps, ACs and home appliances.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
– 6 µs of short-circuit withstand time
– VCE(sat) = 1.55 V (typ.) @ IC = 15 A
– Tight parameter distribution
– Safer paralleling
– Low thermal resistance
– Soft and very fast recovery antiparallel diode
Applications
– Motor control
– UPS
– PFC
– General purpose inverter
Product overview incl. data sheet link
| Rutronik Number | Part Number | Package |
| IGBT2105 | STGB15M65DF2 | D2PAK |
