STM – 650V HB2 series IGBT boosts medium- and high-speed power applications’ efficiency
650V HB2 series IGBT boosts medium- and high-speed power applications efficiency.
With enhanced static and dynamic behavior and excellent thermal performance, the STGWA40H65DFB2 is ideal for solar inverters, chargers and welders.
The IGBT 650V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
– Maximum junction temperature: TJ = 175°C
– Low VCE(sat) = 1.55V(typ.) @ IC = 40A
– Very fast and soft recovery co-packaged diode
– Minimized tail current
– Tight parameter distribution
– Low thermal resistance
– Positive VCE(sat) temperature coefficient
– Solar inverters
|Rutronik Number||Part Number||Voltage||Current||Package|
|IGBT2694||STGWA40H65DFB2||650V||40A||TO-247 Long Lead|