ROHM – Silicon Carbide SiC – Schottky Barrier Diodes
SiC Schottky Barrier Diodes feature an ultra low and temperature independent reverse recovery charge Qrr.
The wide band gap makes SiC diodes suitable for very fast switching frequencies and high break down voltages. Design engineers can fully utilize SiC performance advantages which lead to reduced losses, smaller inductance and lower total system cost.
Key Features:
- Industry-leading low forward Voltage
- High Speed recovery characteristics
- Lower Switching losses
- Low conduction loss
- Reduce temperature dependence
- High speed switching possible
