650V & 1200V Silicon Carbide MOSFETs
SiC exhibits minimal ON resistance increases over temperature, provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature. These are less than 35 cents per Amp in volume, and the reduced costs for magnetics and cooling continue to make SiC based systems even more compelling.
Fulfilling latest quality and functional safety standards as AEC-Q100 qualified and ISO 26262 compliant sensor solution. HAL 15xy /HAL...
Advanced 18V process technology for new Generation of analog designs The TSX series offers a new generation of...
The CoolMOS™ S7 high-voltage superjunction MOSFET family delivers the best price/performance for low-frequency switching applications. With the introduction of...
The 600V CoolMOS™ CFD7 SJ MOSFET is Infineon’s latest highvoltage superjunction MOSFET technology. It comes with reduced gate charge...
The TS881 device is a single comparator featuring ultra low supply current (210 nA typical with output high, VCC=...
TVS Diode Arrays from Littelfuse Combine ESD Protection, Low Dynamic Resistance Ideal for protecting micro-SIM interfaces, touchscreen interfaces on...
RECOM new R420-1.8/PL switching regulators were developed specifically for supplying microprocessors from 4-20mA loop. Characteristics of the flat module...
The M24SR series feature an EEPROM memory bank that can be accessed either through a low-power I²C interface or...
© 2024 Rutronik GmbH, Germany
