ROHM – BSM300D12P2E001 – SiC Power Module

ROHM – BSM300D12P2E001 – SiC Power Module

650V & 1200V Silicon Carbide MOSFETs

SiC exhibits minimal ON resistance increases over temperature, provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature. These are less than 35 cents per Amp in volume, and the reduced costs for magnetics and cooling continue to make SiC based systems even more compelling.

Application Note

Datasheet