Infineon – StrongIRFET™ in Medium Can DirectFET™ – New Corner Gate Pad
Infineon introduces a new family of Medium Can DirectFET™ MOSFETs in the StrongIRFET™ family. The new family of DirectFET™ devices improves the gate layout by re-locating the gate pad to the corner of the die. The new layout increases the source contact area resulting in lower thermal resistance to the PCB and increases the scalability of the design. The family products maintain the same characteristics of the StrongIRFET™ family which includes low RDS(on), high current carrying capability and rugged silicon. The DirectFET™ features excellent top-side cooling for applications requiring thermal performance. The low package profile is ideal for designs requiring low package height and high current density. The DirectFET™ contains zero lead, which complies with current and future RoHS requirements.
Key Features and Benefits:
- Ultra-low RDS(on)
- High current rating
- Rugged silicon
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Lower thermal resistance to PCB
- High current density
Applications:
- Battery Powered Circuits
- Brushed Motor Drive Applications
- BLDC Motor Drive Applications
