Infineon – Reverse Conducting R6 IGBT 650 V

Infineon – Reverse Conducting R6 IGBT 650 V

Reverse Conducting R6 IGBT 650 V portfolio with its monolithically integrated diode offer the lowest Vcesat, lowest power losses and im-proved diode performances bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications using half-bridge topologyThe R6 IGBT family is specifically designed for induction heating application, in order to meet the specific requirements in term of effi-ciency (lowest possible losses in soft switching conditions), higher output power (optimal thermal behavior), reliability (standard Infineon quality level) and capacity (new 12” production line)

Features
– Improved IGBT performance to offer best trade-off between power losses and EMI performance
– Improved diode performance reducing Vf and dependency of gate voltage
– Diode forward recovery peak and time comparable to co-packed device
– Portfolio of 30 A, 40 A, and 50 A devices
– Tj(max) = 175°C
– 650 V blocking voltage
– TO247-3pin package

Benefits
– High compatibility with existing gate driver solutions
– Optimized performance in application conditions
– Low conduction losses
– Low switching losses
– Improved EMI performance

Target applications
– Induction cooking
– Microwave ovens

Competitive advantage
– Reverse Conducting R6 IGBT 650 V represents the optimal choice for half-bridge resonant topology with the best trade-off between power losses and EMI performance

System diagram

Product overview

Product collaterals / Online support
– Product family page

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