Infineon – EiceDRIVER™ WCDSC006 -Half-bridge level-shift gate-driver IC
The half-bridge gate driver EiceDRIVER™ WCDSC006 is particularly suitable to drive both high-side and low-side MOSFETs in a half-bridge inverter configuration especially in inductivewireless power charging technologyfor smartphones.
Features
– -0.3 V to 7 V input bin capability
– 4 A sink and 2 A source current capability for high-side and lo-side drivers
– Independent high-side / low-side TTL logic inputs
– Integrated bootstrap diode
– Maximum bootstrap voltage of 60 V
– 5 ns (typ) dead-time to prevent shoot-throug
– -0.3 V to 7 V input bin capability
– 4 A sink and 2 A source current capability for high-side and lo-side drivers
– Independent high-side / low-side TTL logic inputs
– Integrated bootstrap diode
– Maximum bootstrap voltage of 60 V
– 5 ns (typ) dead-time to prevent shoot-throug
Benefits
– Increased robustness
– Faster switching mode and higher efficiency results
– Increase flexibility
– No need of external components
– Higher margin and more robust operation
– No risk of cross conduction
– Increased robustness
– Faster switching mode and higher efficiency results
– Increase flexibility
– No need of external components
– Higher margin and more robust operation
– No risk of cross conduction
Target applications
– Wireless charging
Block diagram
Product overview incl. data sheet link
| Rutronik Part Number | Infineon Part Number | SP Number | Package |
| ICGDRV1325 | WCDSC006 | SP002574622 | WSON-10 |
