Infineon – EiceDRIVER™ Fast level-shift 650 V

Infineon – EiceDRIVER™ Fast level-shift 650 V

Infineon broadens its EiceDRIVER™ portfolio with the new Fast Level Shift family of 0.7A, 650 V, half-bridge and HS+LS SOI gate drivers in DSO-8 package and 2.5A HS+LS driver in DSO-16W package.Fast 90 ns propagation delay and tight 10 ns (max) matching enables higher frequency switching to expand applications to LLC / LCC resonant ZVS topologies used in many different power conversion applications such as SMPS, UPS, eV Wall Chargers, Battery Chargers, LED lighting Luminaires to name a few.Integrated ultra-fast bootstrap diode, excellent negative VS transient immunity and independent per channel under voltage lockouts suitable for MOSFETs and IGBTs enable superior performance and reduced BOM cost. Also suitable for typical MHA, SHA, and Drives or other motor control applications.

Features
– Operating voltages (VS node) up to + 650 V
– Negative VS transient immunity of 100 V with 300 ns repetitive pulses
– Integrated ultra-fast, low resistance bootstrap diode
– 90 ns propagation delay; 10 ns (max) matching
– Supports switching frequencies up to 500 kHz
– Shutdown input turns off both channels (2ED2110S06M)
– Separate logic and power ground, shorten the gate loop (2ED2110S06M)
– Independent under voltage lockout (UVLO) for both channels
– Maximum supply voltage of 25 V
– Logic operational up to –11 V on VS Pin
– Negative voltage tolerance on inputs of –5 V

Benefits
– Integrated bootstrap diode (BSD)-Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
– 50% lower level-shift losses with Infineon SOI technology for high-er switching frequencies for SMPS and UPS applications
– Higher switching frequencies enable reduction of cost and size for resonant components used in LLC and LCC ZVS topologies by eliminating high side pulse transformer.
– Excellent ruggedness and noise immunity against negative transi-ent voltages (-100 V) on VS pin
– No parasitic device structures present in the device, hence no parasitic latch up at all temperature and voltage conditions
– High current family -suitable for high current power device, and high frequency application

Competitive advantage
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. 50% lower level-shift losses and low propagation delay and tight 10 ns (max) delay matching enables high frequency operation in the 500 kHz range. No parasitic device structures present in the device, hence no parasitic latch up at all temperature and voltage conditions. Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost.

Target applications
– MHA
– Industrial drives, fans, pumps, compressors
– Motor control and drives
– Light electric vehicles (LEV)
– Switched mode power supply (SMPS)
– Uninterruptible power supply (UPS)
– Power tools, service robots, LED lighting

Product overview

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