Infineon – 600V CoolMOS C7 Series – A Stepping Stone to GaN
The new 600 V CoolMOS™ C7 series from Infineon offers a ~50% reduction in turn-off losses
(Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF
and other hard-switching topologies.
Efficiency and total cost of ownership driven applications benefit from the higher
efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies
can be achieved. In the case of a 2.5 kW server PSU, for example, using 600 V C7 MOSFETs in
a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
Bill of material cost driven applications can use the efficiency gained at full load by
the combination of C7 and TO-247 4pin package. This is done by increasing the RDS(on) of
the MOSFET so that it matches previous 3pin package full load efficiency enabling benefits
in costs (i.e. 40 mΩ vs 70 mΩ device). Doubling the switching frequency can also save
magnetic component material. Cost savings of upto 30% in copper windings and 45% in
core (dependant on material used) can be achieved.
- Reduced switching loss parametersuch as Qg, Coss, enabling higher switching frequency
- 50% Eoss reduction compared to older CP technology and close to GaN
- Lowest RDS(on) * A in the world (<1 Ω.mm²)
- Suitable for high-end resonant topologies
- High-end PC Power