Infineon – 100 to 150 V StrongIRFET™ MOSFETs in TO-247
Infineon’s latest 100-150 V StrongIRFET™ MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high power applications. The flagship IRF150P220 offers a 19 percent increase in current carrying capability and 54 percent lower RDS(on) when compared to previous generation devices leading to increased power density and reduction in I2R losses.
Features
- Very low RDS(on)
- High current carrying capability
- 175°C operating temperature
- Industry standard footprint
- Product validation according to JEDEC standard
- Optimized for broadest availability from distribution partners
Benefits
- Low conduction losses
- High power density
- Higher reliability compared to 150°C rated devices
- Accommodate legacy designs
Target Applications
- Uninterruptible power supply (UPS)
- Solar power inverter
- Class D audio amplifier
- Switched mode power supply (SMPS)
- Brushed and BLDC motor drive
- Battery powered circuits
Competitive advantage
- Lowest RDS(on) in its class
- Highest current carrying capability
- Best in class RDS(on) x Qg figure of merit (FOM)
