ROHM Semiconductor’s Full-SiC half bridge power modules are integrating SiC MOSFETs and SBDs in industrial standard packages. An original...
The new 600 V CoolMOS™ C7 series from Infineon offers a ~50% reduction in turn-off losses (Eoss) compared to...
Product Benefits: Low 2.5 mm height Minimum 8 mm clearance and external creepage distance SMD package Provides superior isolation...
OptiMOS™ 5 25 V and 30 V products are based on a new silicon technology, optimized to meet and...
Vishay introduces a new 8 mm by 8 mm by 1.8 mm PowerPAK 8x8L package designed to provide a...
https://www.youtube.com/watch?v=WxtXqrqI_I0
STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing...
Toshiba’s high-efficiency, low-voltage MOSFET technologies are now available in ultra-compact DSOP Advance package options. The new packages offer dual-sided...
The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications such...
Diodes Incorporated has extended its family of dedicated MOSFET H-bridges with the DMHC3025LSD and DMHC4035LSD designed for space limited...
