Infineon – IHV B single switch power module 4.5 kV with IGBT4

Infineon – IHV B single switch power module 4.5 kV with IGBT4

The well-known market leading IHV 4.5 kV IGBT3 modules have now been upgraded to the latest front- and backend technologies and design possibilities. The FZ1800R45HL4(_S7) feature the latest 4.5 kV chip generation in 8” wafer technology and are the perfect fit for Transmission & Distribution as well as industrial drives. Both modules can realize 50% higher output power at the same size, which in turn means cost reduction for the system designer. Over 100k pieces of FZ1200R45HL3(_S7) are the reliable workhorses
enabling a stable green grid, now the new FZ1800R45HL4(_S7) will follow this heritage with even lower losses.

Features
– Latest 4.5 kV chip generation in 8” wafer technology
– Trench/Fieldstop IGBT4, Emitter controlled 4 diode
– High TC and PC capability and cosmic radiation stability
– _S7 feature offers -18% VCEsat

Benefits
– Low power losses with high output RMS currents
– Extended application dependent RBSO and SOA specifications
– >10% lower losses than competition devices, further decrease with _S7 type
– Unbeatable robustness against overload and fault conditions
– Up to 50% reduced system cost
– Standardized housing eases design and maintenance

Target applications
– Transmission & distribution
– Motor control and drives

Block diagram

Product overview

Product collaterals / Online support
– Product page, FZ1800R45HL4
– Product page, FZ1800R45HL4_S7
– Application note

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