Infineon – 1200V CoolSiC™ MOSFETs in TO247-3/-4 package
The 1200 V CoolSiC™ MOSFETs (45mOhm) in TO247-3/-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability.
Technical advantages of SiC devices provide new options vs. Si devices for improvement of power conversion systems, for making next steps in energy efficiency. Compared to Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. For example, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and thresholdfree on-state characteristic.
CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Features
- Features
- Very low switching losses
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Fully controllable dV/dt
- Robust body diode for hard commutation
- Temperature independent turn-off switching losses
- Additional feature for TO247-4 package
> Sense pin for optimized switching performance
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
Competitive advantage
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Short circuit capability of 3μs at gate voltage 15V.
Target applications
- Solar energy systems
- EV charging
- Uninterruptible power supply (UPS)
- Power supplies
- Motor control and drives
Application diagram
