STMicroelectronics – HB series 650 V IGBTs Trench Gate Field-stop High-speed technologies
Energy-saving power family to boosts efficiency, safety, and reliability
Leveraging latest ST’s advanced Trench Gate Field-Stop High-Speed technology the HB series IGBTs combine this picture turn-off efficiency with a very low saturation voltage (VCE(SAT)) down to 1.6 V (typical). In addition to the above features the extended voltage rating (BVCES) at 650 V, the maximum operating junction temperature (TJ) of 175 °C and a wide Safe Operating Area (SOA) results in an increased robustness and so reliability and lifetime. The HB series enhance the energy efficiency of solar inverters, induction heaters, welders, uninterruptible power supplies, power-factor correction, and other highfrequency power converters.
KEY FEATURES
- Maximum junction temperature: TJ = 175 °C
- Very low & minimized Tail in switching-off
- VCE(SAT) = 1.6 V (typ.) @ ICN(100 °C)
- Positive derating of VCE(SAT) with temperature
- Tight parameters distribution
- Co-packed different feature diode
- Switching frequency range 16 – 60 kHz
KEY BENEFITS
- Higher robustness and reliability
- Increase system efficiency for energy saving
- Safer paralleling operations
- Specific diode option for different application
TARGETED APPLICATIONS
- Welding
- Photovoltaic inverters
- Uninterruptible power supply
- Power factor correction
- Induction cooking
- High frequency converters
650V HB SERIES POSITIONING
Options include maximum current ratings from 20 A to 80 A (at 100 °C), a selection of popular power packages, and co-packed diode optimized for soft or hard-switching circuits.
