Infineon – Easy 1B, 2B with CoolSiC™ MOSFET

Infineon – Easy 1B, 2B with CoolSiC™ MOSFET

Easy power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density.
Combining the strengths of the Easy power modules, that set a benchmark in low stray inductance, with the strengths of Infineon’s 1200V CoolSiC™ MOSFET chip enables our customers to reduce system and operational costs significantly.

Features
– About 80% lower switching losses compared to Si
– Low conduction losses due to linear output characteristic
– Broadest portfolio of CoolSiC™ MOSFET in Easy package on the market
– Superior gate oxide reliability
– Intrinsic body diode with low reverse recovery charge
– Highest threshold voltage of Vth > 4V
– Specified short circuit capability of 2μs

Benefits
– Reduced system costs since 2-3 times higher switching frequencies are possible. Reduced operational costs due to higher efficiency
– Tailoring inverter design to application needs due to 3 different available topologies
– Longer lifetime and better long term stability of inverter system
– Increased power density
– Highest robustness against parasitic turn-on
– Ready to use for applications with SC requirement

Target applications
– Solar
– UPS
– Energy storage
– EV-Charging
– Medical

Product collaterals / Online support
– Product family page
– IPOSIM Power Simulation

Diagram

Product overview incl. data sheet link