Infineon – CoolGaN™ 600 V e-mode HEMTs
Cutting-edge performance with excellent reliability
Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon switches, which makes GaN HEMTs great for high speed switching.
Features
- The most reliable GaN-based solution, delivering highest performance amongst all available GaN devices
- Manufacturing expertise throughout the entire supply chain
- Global application design support
- Broad portfolio including switches and drivers
Competitive advantage
- Performance advantage — FOMs
- Concept advantage —key: gate robustness, best for high frequency
- Reliability— beyond JEDEC, true 15+ years lifetime
- Manufacturing setup — high volume Fab, in-house dual epi capacity
- Price roadmap — enabled by economy of scale, high volume Fab)
- Supply chain — fully owned
- First class worldwide support
System benefits
- Perfect choice for high frequency and high power density applications
- Industry-leading solution for target applications
- GaN EiceDRIVER™ ICs for excellent robustness and efficiency
- High quality volume supply that enables faster time-to-market
- Reduced BOM costs and overall system cost
Target applications
- Server, Telecom, Datacom, Adapter, Charger, Wireless charging, SMPS
Evaluation boards
- CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ EVAL_1EDF_G1_HB_GAN
- 2.5 kW full-bridge PFC high-efficiency evaluation board using CoolGaN™ 600V e-mode HEMTs EVAL_2500W_PFC_GAN_A
