ROHM – 3rd Generation Trench-Type SiC MOSFETs
ROHM’s new 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment.
Key Advantages:
- Lower ON resistance improves inverter power density
- Supports high-speed switching
- Minimal reverse recovery behavior of the parasitic diode
- Small Qg and parasitic capacitance
- Eliminates degradation caused by parasitic diode conduction
- Compatible with high-temperature operation (Tjmax=175C)
650V 1200 V
SCT3022AL Data Sheet SCT3030KL Data Sheet
SCT3030AL Data Sheet SCT3040KL Data Sheet
SCT3060AL Data Sheet SCT3080KL Data Sheet
SCT3120AL Data Sheet SCT3160KL Data Sheet
