Alliance Memory – High speed CMOS SDRAM with low 16Mbit density in 50pin TSOP II Package

Alliance Memory – High speed CMOS SDRAM with low 16Mbit density in 50pin TSOP II Package

Alliance Memory is introducing a new high-speed CMOS SDRAM with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.

The new SDRAM is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (± 0.3 V) power supply, and is lead (Pb) and halogen free.

The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in our full line of high-speed SDRAMs, which now includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb and 512Mb.