Vishay – SiSS94DN 200V MOSFET in 10.89 mm² PowerPAK® 1212-8S Package
Vishay Intertechnology introduces a new 200V N-channel TrenchFET® Gen IV power MOSFET that offers industrylow typical on-resistance of 61mΩ at 10 V in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge of 854mΩ*nC.
Product Features:
- Purpose-built to increase power density, the spacesaving SiSS94DN is 65% smaller than devices with similar on-resistance in 6 mm by 5 mm packages
- 20 % lower typical on-resistance than the next best product on the market in a similar package size
- 17 % lower FOM than the previous-generation solution
- With its compact size, the SiSS94DN allows designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or a similar sized MOSFET with higher conduction losses
Product Benefits:
- Reduced conduction and switching losses to save energy
- Industry-low typical on-resistance of 61mΩ at 10V
- Typical Qg of 14nC
- Improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 854 mΩ*nC
- Offered in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package
- Compact form factor is easier to fit into designs with limited PCB real estate
- 100% RG- and UIS-tested
- RoHS-compliant, and halogen-free
Market Applications:
- Primary-side switching for isolated DC/DC topologies and synchronous rectification in power supplies
- telecom equipment, networking equipment, and consumer electronics
- LED backlighting for computers, LED TVs
- motor drive control, load switching, and power conversion for GPS, factory automation, and industrial
applications
Product collaterals / Online support:
