Vishay – Thin Film, High Power, Back-Contact Resistor
The Benefits of Using a Thin Film, High Power, Back-Contact Resistor |
| Learn more about the main features of the IGBR family and its low inductance, small size, wire bond capability, and matching power module component attachment methods |
IGBRA / IGBRB / IGBRC / IGBRD
The Vishay Electro Films IGBR is a thin film, high power, back-contact
resistor family. With case sizes ranging from 0202 to 0808, the devices offer a
miniature option for high power applications. The main features of the IGBR
family are low inductance, small size, wire bond capability, and matching
power module component attachment methods.
The top termination on the IGBR consists of Al with a 2.5 µm minimum
thickness, which is suitable for heavy gage aluminum wire bonding. Because
the IGBR is a back-contact resistor, it only requires one wire bond for a
chip and wire assembly. The IGBR can bond with a wire that is up to 6 mils
in diameter. Due to the single wire bond, the part maintains extremely low
inductance. The length of the wire determines the amount of inductance in the
module, so the shorter the wire the lower the inductance.
The IGBR is the perfect part for saving space in power modules. For
comparison, the IGBRD in the 0808 case size can handle up to 4 W, while
a thin film surface-mount chip in the 2512 case size can handle up to 6 W,
and a thick film chip resistor on AlN in the 2512 case size can handle 3.5 W.
The wire bond process and attachment methods match SiC assembly
processes for gate resistors in power modules.
The IGBR resistors can be used in the following applications: a gate resistor
for IGBT modules and SiC MOSFET power modules, current limiting in LED
lighting, alternative energy, and high power applications.
Why are gate resistors required in a power module?
The resistor:
1. Affects switching loss and prevents gate ringing
2. Limits the noise in the gate drive path
3. Limits parasitic inductances and capacitances
4. Limits current that charges and discharges the gate
5. Limits peak gate current to protect the
driver output stage
6. Dissipates the power in the gate loop
7. Influences the switching speed by limiting current
FEATURES
• Noise reduction or elimination when used in
SiC power modules
• Sintering, soldering, and epoxy attachment
options
• Wire bondable
• Small size, high power density
• High power rating
• Single wire bond assembly
• Moisture resistant
• Case size: 0202 to 0808
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Gate resistor for SiC based power modules
• Gate resistor for IGBT based power converters
• Current limiting for LED lighting applications
• High power applications
• Alternative energy
• Hybrid assemblies
