STMicroelectronics – World’s First 1500V Super-Junction Power MOSFETs
A new family of Power MOSFETs from STMicroelectronics allows designers of power supplies to maximize the power efficiency of their products while enhancing robustness and safety margins. The MDmeshTM K5 devices are the first in the world to combine the benefits of super-junction technology with a drain-to-source breakdown voltage of 1500V.
The new devices address the growing demand for higher output power for auxiliary switched-mode power supplies in servers, where power-supply robustness is a key factor in minimizing down-time, and in industrial applications such as welding and factory automation. For these applications, where power output ranges from 75W to 230W or above, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching Performance.
ST’s MDmesh K5 Power MOSFET family takes this technology to a new level, with the lowest On-Resistance (RDS(on)) per area and the lowest gate charge (Qg) in the market, resulting in the industry’s best FoM (Figure of Merit). The devices are ideal for all popular power-supply topologies, including standard, quasi-resonant and active-clamp flyback converters, and LLC (“two inductors and one capacitor” and it is an AC-DC converter topology that offers high efficiency (95%+) over a wide range of AC input voltages) half bridge converters for applications where high efficiency (up to 96%) and output powers approaching 200W are required for a wide range of input voltages.
Key Features:
- Industry’s lowest RDS(on)*area
- Industry’s best figure of merit (FoM)
- Ultra low gate Charge
- 100% avalanche tested
- Zener-protected
