STMicroelectronics – STripFET VII DeepGATE F7 – A revolutionary newcomer touching the edge of his class
STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as fork lifts, telecom DC/DC, motor control in fans and power tools as also automotive stabilization systems.
Features and benefits:
- Among lowest RDS(on) in the market
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Lowest Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
