New VOL3120 Low-Profile IGBT / MOSFET Driver Saves Space in Compact Inverters
Product Benefits:
- Low 2.5 mm height
- Minimum 8 mm clearance and external creepage distance
- SMD package
- Provides superior isolation
- Undervoltage lock-out feature
- Common mode transient immunity of more than 48
kV/μs - Low current consumption of 2.5 mA maximum
- Typical propagation delays of less than 250 ns
- Rise and fall times of 100 ns typical
- Wide power supply range of 15 V to 32 V
- ndustrial temperature range from -40 °C to +100 °C
- Unlimited floor life
- Moisture Sensitivity Level (MSL) of 1 in accordance to J-STD-020
- RoHS-complaint, halogen-free, and Vishay Green
Market Applications:
- Inductive stove-tops and inverters for motor drives, alternative energy, welding equipment, and other high working voltage applications
The News:
Vishay Intertechnology broadens its optoelectronics portfolio with the introduction of a new low-profile 2.5 A IGBT and MOSFET driver for motor drives, alternative energy, welding equipment, and other high working voltage applications. The Vishay Semiconductors VOL3120 features a small footprint with a 2.5 mm height and minimum 8 mm clearance and external creepage distance. In addition to its compact size, the device provides high isolation voltage ratings of VIORM = 1050 V and VIOTM = 8000 V.
- Ideal for applications operating at higher working voltages and/or with higher pollution degree environments
- 30 % lower height than drivers in the standard DIP package
- Incorporates state-of-the-art electrical performance
The Key Specifications:
- Minimum peak output current: 2.5 A
- VIORM: 1050 V
- VIOTM: 8000 V
- Common mode transient immunity: 48 kV/μs minimum at VCM = 1500 V
- Supply current: 2.5 mA
- Propagation delay time: < 250 ns typical
- Rise and fall times: 100 ns typical
- Power supply range: 15 V to 32 V
- Operating temperature range: -40 °C to +100 °C
The Perspective:
With its small footprint and low 2.5 mm height, the Vishay Semiconductors VOL3120 saves space and enables flat-sized applications such as inductive stove tops and compact inverters used in domestic solar and motor drives. In addition to providing superior isolation, the device’s undervoltage lock-out feature protects the IGBT / MOSFET from malfunction, while its common mode transient immunity of more than 48 kV/μs eliminates noise issues from low-voltage areas on the PCB. The VOL3120’s low current consumption of 2.5 mA maximum makes it a practical choice in power design applications where high-efficiency operation is required. The device boasts typical delays of less than 250 ns and rise and fall times of 100 ns typical, making it ideal for applications where fast switching of IGBTs or MOSFETs is required.
Availability: Samples and production quantities of the VOL3120 are available now, with lead times of eight to 10 weeks for larger orders.
