New VEMD8080 High Speed PIN Photodiode Offers Enhanced Sensitivity for Visible Light, Enables Slim Sensor Designs for wearables

Device Delivers Precise Signal Detection in 4.8 mm by 2.5 mm SMD Package

With Industry-Low 0.48 mm Profile

Product Benefits:

•Enhanced sensitivity for visible light

•Rectangular 4.8 mm by 2.5 mm top-view, surface-mount package with a low 0.48 mm profile

•Fast switching times

•Low capacitance of 47 pF

•Radiant-sensitive area measuring 4.5 mm²

•Reverse light current of 28 μA and dark current of 0.2 nA

•Wide spectrum range from 350 nm to 1100 nm

•± 65° angle of half-sensitivity

•Temperature range of -40° C to +85 °C

•950 nm wavelength of peak sensitivity

•RoHS-compliant, halogen-free, and Vishay Green

•Moisture sensitivity level (MSL) of 4 in accordance with J-STD-020 for a floor life of 72 hours

Market Applications:

•Optical heart rate detection in wearable devices when used with green LEDs, such as Vishay’s VLMTG1400

•SpO2 measurement in medical monitors when combined with 660 nm and 940 nm dual color emitting diodes

The News:

Vishay Intertechnology broadens its optoelectronics portfolio with the introduction of a new high speed silicon PIN

photodiode with enhanced sensitivity for visible light. Featuring a rectangular 4.8 mm by 2.5 mm top-view, surface-mount package with an industry-low 0.48 mm profile, the Vishay Semiconductors VEMD8080 offers fast switching

times and low capacitance of 47 pF for precise signal detection in wearable devices and medical applications.

0.37 mm lower profile than competing solutions
Utilizes Vishay’s proven wafer technology to detect visible and near infrared radiation
For green LEDs, sensitivity represents a 30 % improvement over the standard technology in previous- generation solutions
Small size and high sensitivity enable slim sensor designs for optical heart rate detection in wearable devicessuch as fitness trackers and smart watches
The VEMD8080’s rectangular shape allows several light emitting diodes to be placed close to the radiant

sensitive area to maximize the signal

The Key Specifications:

Typical capacitance: 47 pF
Radiant sensitive area: 4.5 mm²
Reverse light current: 28 μA
Dark current: 0.2 nA
Spectral bandwidth: 350 nm to 1100 nm
Angle of half-sensitivity: ± 65°
Temperature range: -40 °C to +85 °C
Wavelength of peak sensitivity: 950 nm

Demo Board: A product demo board is available from MikroElektronika.

Availability:

Samples and production quantities of the VEMD8080 are available now, with lead times of eight to 10 weeks for

large orders.