Infineons New MMIC LNAs and RF Switches for LTE Diversity

Infineon’s New LTE LNAs and RF Switches improve smartphone data rates by up to 96%  by providing a low noise figure, the exact gain and low insertion loss needed to help smartphone designers overcome the increasing losses in the diversity path.

Improving smartphone data rates by up to 96% LTE LNA (low noise amplifiers) and quad LNA banks are becoming more and more popular on diversity applications. They improve smartphone data rates by up to 96% by providing a low noise figure, the exact gain and high linearity needed to help smartphone designers overcome the increasing losses and the deterioration of the system signal-to-noise ratio which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in the latest 3G release.

As for the RF Switches, depending on the number of bands supported, several RF Switches with mid-range power capability are suggested for the diversity application like BGS16MN14 SP6T and BGS18MN14 SP8T switch. Bulk CMOS RF Switches come with the low insertion loss and excellent RF performance needed.

Learn more about Infineon’s MMIC LNAs and RF Switches offering 

 

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