Infineon – BGS12P2L6 – High Power SPDT RF Switch

Infineon – BGS12P2L6 – High Power SPDT RF Switch

The BGS12P2L6 is a general purpose high power SPDT switch, designed to cover a broad range applications from 0.05 to 6 GHz and therefore excellent for 5G sub-6 GHz. Its outstanding RF performance optimizes the transmitting path (TRx) of LTE/5G mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.
The BGS12P2L6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 x 1.1 mm2 and a maximum height of 0.31 mm.

Features
> High power handling up to 37dBm àoptimal for cellular trans-mitting paths (TRx)
> GPIO controlled
> Very small footprint [1.1 x 0.7 mm]
> Broad frequency range 0.05 – 6.0 GHz
> Low IL@2.7GHz: 0.31dBm, high ISO@2.7GHz: 35dBm

Target applications
> Mobile cellular TRx path (4G, 5G)
> Multipurpose RF switch for high power application

Application diagram—Antenna

Benefits
> Easy integration into existing architectures àGPIO control
> Wideband applicable à5G sub-6GHz capable
> Higher system reliability through best-in-class RF performance

Competitive advantage
> High linearity up to 37dBm power handling
> Best-in-class insertion loss and Isolation levels up to 6GHz

Product collaterals / Online support
Product page

Product overview incl. data sheet link

Shopping