Infineon – 650 V Hybrid CoolSiC™ IGBT

Infineon – 650 V Hybrid CoolSiC™ IGBT

The new 650 V Hybrid CoolSiC™ IGBT combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky barrier CoolSiC™ diode.Use of a Schottky barrier diode as freewheeling diode co-packed with IGBT allows to extend capabilities of IGBT and enables significant reduction in Eon and overall switching losses. Fast and easy upgrade of 650 V TRENCHSTOP™5 IGBT designs with Hybrid CoolSiC™ IGBT brings efficiency improvement of 0.1% for each 10 kHz switching frequency.For example in a half bridge converter working at switching speed of 23 kHz replacement of silicon IGBT with CoolSiC™ Hybrid IGBT might increase efficiency by ~ 0.23%.

Features
– Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology
– Very low on-state losses
– Benchmark switching IGBT in hard switching topologies

Benefits
– Highest efficiency
– Reduced cooling effort
– Increased power density
– Plug & play replacement of the pure silicon devices
– Easy upgrade of existing designs for higher efficiency
– Excellent for paralleling

Competitive advantage
Comprehensive product portfolio:
– current classes from 40 A to 75 A
– 2 types of package –TO-247-3pin and Kelvin emitter TO-247-4pin for superior efficiency at fast switching
– Cost / performance optimized offer of half-rated and full-rated co-packed CoolSiC™ Schottky diode

Target application
– Industrial UPS
– Industrial SMPS
– Solar String Inverter
– Energy Storage
– Charger

System diagram

Product overview

Product collaterals / Online support
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